Thin film magnetic memory device reducing a charging time of...

Details Thin film magnetic memory device reducing a charging time of... Thin film magnetic memory device reducing a charging time of...

2007-11-13

2007-11-13

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S066000, C365S158000, C365S097000, C365S074000, C365S055000, C365S033000

Reexamination Certificate

active

11374062

ABSTRACT:
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so that it is possible to reduce a time required from start of the data reading to such a state that a passing current difference between the data lines reaches a level corresponding to storage data of the selected memory cell, and the data reading can be performed fast.

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