Method of forming high voltage devices with retrograde well

Details Method of forming high voltage devices with retrograde well Method of forming high voltage devices with retrograde well

2007-05-22

2007-05-22

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S346000, C257S408000, C257SE29012, C257SE29278, C257SE21435

Reexamination Certificate

active

10877450

ABSTRACT:
A high voltage device with retrograde well is disclosed. The device comprises a substrate, a gate region formed on the substrate, and a retrograde well placed in the substrate next to the gate region, wherein the retrograde well reduces a dopant concentration on the surface of the substrate, thereby minimizing damages to the gate region.

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