Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-27
2007-02-27
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S018000, C257S347000, C257S200000, C257S192000, C257S019000, C257SE29193, C438S197000, C438S483000
Reexamination Certificate
active
11164224
ABSTRACT:
A structure and method for making includes adjacent pMOSFET and nMOSFET devices in which the gate stacks are each overlain by a stressing layer that provides compressive stress in the channel of the PMOSFET device and tensile stress in the channel of the nMOSFET device. One of the PMOSFET or nMOSFET device has a height shorter than that of the other adjacent device, and the shorter of the two devices is delineated by a discontinuity or opening in the stressing layer overlying the shorter device. In a preferred method for forming the devices a single stressing layer is formed over gate stacks having different heights to form a first type stress in the substrate under the gate stacks, and forming an opening in the stressing layer at a distance from the shorter gate stack so that a second type stress is formed under the shorter gate stack.
REFERENCES:
patent: 6600170 (2003-07-01), Xiang
Doris Bruce B.
Ren Zhibin
Wang Jing
Zhu Huilong
C. Li Todd M.
Flynn Nathan J.
Wilson Scott R
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