Semiconductor device and semiconductor memory using the same

Details Semiconductor device and semiconductor memory using the same Semiconductor device and semiconductor memory using the same

2007-05-22

2007-05-22

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S401000, C365S185050, C365S185110

Reexamination Certificate

active

11236629

ABSTRACT:
A cell transistor includes source/drain regions formed at a lower level than part of its channel region. A select transistor has a channel region and source/drain regions formed at substantially the same level as the source/drain regions of the cell transistor. One of the source/drain regions of the cell transistor and one of the source/drain regions of the select transistor are electrically interconnected to each other in substantially the same plane.

REFERENCES:
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patent: 6861315 (2005-03-01), Chen et al.
patent: 6944062 (2005-09-01), Miida
patent: 2002/0014666 (2002-02-01), Ohmi et al.
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patent: 2003/0095441 (2003-05-01), Miida
patent: 2001-160555 (2001-06-01), None
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Paper No. 29p-YC-4, The 48th Joint Meeting of Engineers of Applied Physics of Japan.

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