Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2007-05-22
2007-05-22
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S079000, C257S081000, C257S094000, C257S098000, C257S099000, C257S103000
Reexamination Certificate
active
11066699
ABSTRACT:
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
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Biwa Goshi
Doi Masato
Kikutani Tomoyuki
Okuyama Hiroyuki
Oohata Toyoharu
Bell Boyd & Lloyd LLP
Louie Wai-Sing
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