Multi-bit nanocrystal memory

Details Multi-bit nanocrystal memory Multi-bit nanocrystal memory

2007-01-30

2007-01-30

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000

Reexamination Certificate

active

11001936

ABSTRACT:
An improved memory cell having a pair of non-volatile memory transistors with each transistor using a nanocrystal gate structure, the transistor pair constructed between a pair of bit line polysilicon depositions. Between the pair of non-volatile memory transistors, a word line device is interposed, allowing serial linkage of the pair of non-volatile memory transistors.

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patent: 6949788 (2005-09-01), Fujiwara et al.
patent: 2004/0130941 (2004-07-01), Kan et al.

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