Method of making a semiconductor device by balancing shallow...

Details Method of making a semiconductor device by balancing shallow... Method of making a semiconductor device by balancing shallow...

2007-02-06

2007-02-06

Do, Thuan (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

10992031

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device, comprising: determining an isolation structure stress effect of a first semiconductor device, determining an optical proximity effect of a second semiconductor device, selecting a modeling design parameter such that the isolation structure stress effect is offset against the optical proximity effect on a fabrication model, and using the selected design parameter to construct a third semiconductor device.

REFERENCES:
patent: 6977392 (2005-12-01), Yamazaki et al.

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