Process for producing aluminum-filled contact holes

Details Process for producing aluminum-filled contact holes Process for producing aluminum-filled contact holes

2007-05-08

2007-05-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S680000, C257SE21585

Reexamination Certificate

active

10768241

ABSTRACT:
A process for producing aluminum-filled contact holes in a wafer is disclosed. The process uses a coating installation that includes a plurality of vacuum-processing chambers that are coupled to one another via at least one transfer chamber with an associated handler for transferring the wafers. The preferred process including forming the contact holes and depositing a barrier layer. The wafer is cooled to ambient temperature. A cold aluminum PVD coating process can then be carried out in a PVD-aluminum ESC chamber. After the wafer is heated (e.g., to a temperature of less than about 450° C.), a hot aluminum PVD deposition process is carried out in the PVD-aluminum ESC chamber.

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Lee, J.M., et al., “A Noble Metallization Process Using Preferential Metal Deposition (PMD)—Aluminum with Methylpyrroridine Alane (MPA),” Proceedings of the International Interconnect Conference, Jun. 4-6, 2001.
Yun, J.H., et al., “Submicron Via-Hole Filling using Al Low-Pressure Seed Process,” Jpn. J. Appl. Phys. vol. 40 (2001) pp. 5105-5108.

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