Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-01-09
2007-01-09
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185190
Reexamination Certificate
active
11194439
ABSTRACT:
The maximum allowable number of voltage programming pulses to program memory elements of a non-volatile memory device is adjusted to account for changes in the memory elements which occur over time. Programming pulses are applied until the threshold voltage of one or more memory elements reaches a certain verify level, after which a defined maximum number of additional pulses may be applied to other memory elements to allow them to also reach associated target threshold voltage levels. The technique enforces a maximum allowable number of programming pulses that can change over time as the memory is cycled.
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Lutze Jeffrey W.
Wan Jun
Dinh Son T.
Sandisk Corporation
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