Semiconductor assembly having substrate with electroplated...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S928000, C438S667000, C438S678000

Reexamination Certificate

active

10985757

ABSTRACT:
An apparatus comprising an insulating substrate (101) having first and second surfaces (101a, 101b) and a plurality of metal-filled vias (102) extending from the first to the second surface. The first and second surfaces have contact pads (103, 104), each one comprising a connector stack to at least one of the vias. The stack comprises a seed metal layer (110, copper) in contact with the via metal capable of providing an adhesive and conductive layer for electroplating on its surface, a first electroplated support layer (111a, copper) secured to the seed metal layer, a second electroplated support layer (111b, nickel), and at least one reflow metal bonding layer (112, palladium, gold) on the second support layer. The electrolytic plating process produces support layers substantially pure (at least 99.0%), free of unwanted additives such as phosphorus or boron, and exhibiting closely controlled grain sizes. Reflow metal connectors (220, 230) provide attachment to chip contact pads and external parts.

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