Metal-poly integrated capacitor structure

Details Metal-poly integrated capacitor structure Metal-poly integrated capacitor structure

2007-07-03

2007-07-03

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S535000, C257SE27016

Reexamination Certificate

active

10921463

ABSTRACT:
A metal-poly integrated capacitor structure that may be used in a charge pump circuit of a non-volatile memory. In one embodiment, the capacitor comprises a poly silicon layer, a first metal layer and a second metal layer. The first metal layer is positioned between the poly silicon layer and the second metal layer. The first metal layer has a first terminal and a second terminal. The first terminal is electrically isolated from the second terminal.

REFERENCES:
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patent: 5583359 (1996-12-01), Ng et al.
patent: 6240033 (2001-05-01), Yang et al.
patent: 6385033 (2002-05-01), Javanifard
patent: 6410955 (2002-06-01), Baker
patent: 6509245 (2003-01-01), Baker
patent: 2002/0120937 (2002-08-01), Chang

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