Semiconductor device with memory function and method of...

Details Semiconductor device with memory function and method of... Semiconductor device with memory function and method of...

2007-05-22

2007-05-22

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000

Reexamination Certificate

active

10841544

ABSTRACT:
A TFT memory11is provided with a polysilicon layer22, wherein each region of the source22a, the channel22band the drain22care formed on a substrate21, and gate oxide films (insulating films)23and25are formed on the polysilicon layer22; and a plurality of silicon particles24for trapping the charge of injected carriers are placed between the gate oxide films23and25. Specifically, the gate oxide films comprise a first gate oxide film23and a second gate oxide film25formed on the first gate oxide film23; the plurality of silicon particles24are located between the first gate oxide film23and the second gate oxide film25, and the first gate oxide film23is formed in an extremely thin thickness.

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Ya-Chin King et al., “MOS Memory Using Germanium Nanocrystals Formed by Thermal Oxidation of Si1-xGex”, IEDM, 1998 pp. 115-118.

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