Semiconductor non-volatile memory cell with a plurality of...

Details Semiconductor non-volatile memory cell with a plurality of... Semiconductor non-volatile memory cell with a plurality of...

2007-11-13

2007-11-13

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S317000, C257S324000

Reexamination Certificate

active

10919471

ABSTRACT:
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

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