Semiconductor wafer, semiconductor chip and method for...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

Reexamination Certificate

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Details

C438S114000, C257SE21599, C257SE25012, C257S025000

Reexamination Certificate

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11079383

ABSTRACT:
In a semiconductor device, in which an insulating layer is disposed on the main face of the silicon substrate, and the insulating layer includes the protruding portion that protrudes from the end face of the silicon substrate, the protruding portion has an interconnect of Cu embedded within the insulating layer.

REFERENCES:
patent: 6221751 (2001-04-01), Chen et al.
patent: 6326689 (2001-12-01), Thomas
patent: 6589815 (2003-07-01), Matsuoka et al.
patent: 2005/0095750 (2005-05-01), Lo et al.
patent: 62-171137 (1987-07-01), None
patent: 2002-093752 (2002-03-01), None

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