Semiconductor device including silicided source and drain...

Details Semiconductor device including silicided source and drain... Semiconductor device including silicided source and drain...

2007-01-02

2007-01-02

Nguyen, Thanh (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000

Reexamination Certificate

active

10821886

ABSTRACT:
A method for manufacturing a MOSFET equipped with a silicide layer over shallow source and drain junctions without leakage generation is provided. By restricting the temperature of manufacturing steps after the silicide formation below a critical temperature Tc, which is defined below as a function of a junction depth Dj from 20 nm to 60 nm, leakage generation is practically suppressed.in-line-formulae description="In-line Formulae" end="lead"?Tc=a×Dj+b,in-line-formulae description="In-line Formulae" end="tail"?wherea=6.11⁢⁢(20<Dj≤26)⁢=1.60⁢⁢(26<Dj≤60),b=290.74⁢⁢(20<Dj≤26)⁢=408⁢⁢(26<Dj≤60),Dj is a junction depth (nm) measured from the lower surface of the silicide layer, and Tc is a critical temperature (° C.) during a heat treatment.

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U.S. Appl. No. 10/256,164, filed Sep. 27, 2002, Tsuchiaki.
U.S. Appl. No. 10/947,381, filed Sep. 23, 2004, Tsuchiaki.

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