Semiconductor device

Details Semiconductor device Semiconductor device

2007-05-29

2007-05-29

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189050, C365S230080

Reexamination Certificate

active

11359538

ABSTRACT:
A phase change memory is provided with a write data register, an output data selector, a write address register, an address comparator and a flag register. Write data is not only written into a memory cell but also retained by the write data register until the next write cycle. If a read access occurs to that address before the next write cycle, data is read out from the register without reading the data from the memory cell array. Without elongating the cycle time, it is possible not only to use a long time to write data into a memory cell therein but also to make longer the interval between the time when a write operation is done and the time when the subsequent read operation is made from that memory cell. As a result, data can be written reliably.

REFERENCES:
patent: 5295258 (1994-03-01), Jewett et al.
patent: 5754764 (1998-05-01), Davis et al.
patent: 6201733 (2001-03-01), Hiraki et al.
patent: 6263452 (2001-07-01), Jewett et al.
patent: 6385100 (2002-05-01), Noda et al.
patent: 6480415 (2002-11-01), Makuta et al.
patent: 6538933 (2003-03-01), Akioka et al.
patent: 6930912 (2005-08-01), Inui
patent: 2002/0172068 (2002-11-01), Hidaka
Manzur Gill, Tyler Lowrey and John Park, “Ovonic Unified Memory—A High-Performance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Applications”, 2002 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, 3 pages.
A. Pirovano, A.L. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer and R. Bez, “Electronic Switching Effect in Phase-Change Memory Cells”, 2002 IEEE International Electron Devices Meeting, Technical Digest, pp. 923-926.
Y.N. Hwang et al., “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors”, 2003 Non-Volatile Semiconductor Memory Workshop, Digest of Technical Papers, pp. 91-92.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3807298