Shallow junction semiconductor

Details Shallow junction semiconductor Shallow junction semiconductor

2007-11-20

2007-11-20

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000

Reexamination Certificate

active

11307537

ABSTRACT:
An integrated circuit with a semiconductor substrate is provided. A gate dielectric is on the semiconductor substrate, and a gate is on the gate dielectric. A silicide layer is on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide layer incorporates a substantially uniformly distributed and concentrated dopant therein. A shallow source/drain junction is beneath the salicide layer. An interlayer dielectric is above the semiconductor substrate, and contacts are in the interlayer dielectric to the salicide layer.

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