Semiconductor device, method for manufacturing same and thin...

Details Semiconductor device, method for manufacturing same and thin... Semiconductor device, method for manufacturing same and thin...

2007-11-27

2007-11-27

Lam, Cathy F. (Department: 1775)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S702000, C174S251000, C174S260000, C174S262000, C428S209000, C428S901000

Reexamination Certificate

active

10725993

ABSTRACT:
The present invention provides a low-profile and light-weight semiconductor device having improved product reliability and higher frequency performance. A multi-layer interconnect line structure is disposed just under circuit devices410aand410b.An Interlayer insulating film405that composes a part of the multi-layer interconnect line structure is formed of a material having a relative dielectric constant within a range from 1.0 to 3.7, and a dielectric loss tangent within a range from 0.0001 to 0.02.

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Chinese Office Action for Corresponding Patent Application No. 200310120768.4, Date of Dispatch: Mar. 31, 2006.
Japanese Office Action issued in corresponding Japanese Patent Application No. 2003-400047, dated Aug. 8, 2006.

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