Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29242, C438S264000
Reexamination Certificate
active
10396463
ABSTRACT:
A first aspect of the present invention is providing a non-volatile semiconductor memory device, comprising: a memory cell having a tunnel oxide layer formed on a semiconductor substrate, a floating gate formed on the tunnel oxide layer, a control gate to which voltage is supplied, a source diffusion layer and a drain diffusion layer, the source and drain diffusion layers formed in the semiconductor substrate adjacent to the tunnel oxide layer; a contact layer connected to the drain diffusion layer; and a layer formed above the memory cell, the layer comprising at least one of: 1) a silicon oxide layer to which nitrogen are doped, 2) a silicon oxide layer to which aluminum are doped, 3) an aluminum oxide layer, 4) a silicon oxide layer to which titanium are doped, 5) a silicon oxide layer to which two of nitrogen, aluminum, and titanium are doped, 6) a silicon oxide layer to which nitrogen, aluminum, and titanium are doped, 7) a titanium oxide layer, 8) a titanium and aluminum oxide layer, 9) a simple metal layer comprising one of Ti, Ni, Co, Zr, Cu, Pt, V, Mg, U, Nd, La, and Sc, 10) an alloy layer comprising at least two of Ti, Ni, Co, Zr, Cu, Pt, V, Mg, U, Nd, La, and Sc, and the at least two of Ti, Ni, Co, Zr, Cu, Pt, V, Mg, U, Nd, La, and Sc being included 50% or more, 11) a nitrogenous layer of the alloy layer, and 12) a hydrogenated layer of the alloy layer.
REFERENCES:
patent: 5343514 (1994-08-01), Snyder
patent: 5656519 (1997-08-01), Mogami
patent: 5895239 (1999-04-01), Jeng et al.
patent: 5953609 (1999-09-01), Koyama et al.
patent: 6040605 (2000-03-01), Sano et al.
patent: 6104430 (2000-08-01), Fukuoka
patent: 6137179 (2000-10-01), Huang
patent: 6144060 (2000-11-01), Park et al.
patent: 6242299 (2001-06-01), Hickert
patent: 6258649 (2001-07-01), Nakamura et al.
patent: 6301155 (2001-10-01), Fujiwara
patent: 6342712 (2002-01-01), Miki et al.
patent: 6479343 (2002-11-01), Hwang et al.
patent: 6528413 (2003-03-01), Hashimi
patent: 6548108 (2003-04-01), Lohwasser et al.
patent: 6593190 (2003-07-01), Lee et al.
patent: 6618072 (2003-09-01), Naito
patent: 6635913 (2003-10-01), Miki et al.
patent: 6653201 (2003-11-01), Chung
patent: 6693321 (2004-02-01), Zheng et al.
patent: 2001/0006239 (2001-07-01), Yang et al.
patent: 02-281663 (1990-11-01), None
patent: 04-177761 (1992-06-01), None
patent: 5-63208 (1993-03-01), None
patent: 09-331031 (1997-12-01), None
patent: 11-087633 (1999-03-01), None
patent: 11-284067 (1999-10-01), None
patent: 2000-260888 (2000-09-01), None
patent: 2001-015703 (2001-01-01), None
patent: 2001-028404 (2001-01-01), None
patent: 2001-223342 (2001-08-01), None
patent: WO98/31053 (1998-07-01), None
patent: WO 0124237 (2001-04-01), None
Fukuhara Jota
Himeno Yoshiaki
Kobayashi Hideyuki
Shiba Katsuyasu
Tsunoda Hiroaki
Kabushiki Kaisha Toshiba
Pert Evan
LandOfFree
Semiconductor memory device having a gate electrode and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having a gate electrode and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a gate electrode and a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3806824