Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-13
2007-03-13
Malsawma, Lex (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
11157956
ABSTRACT:
A preventive treatment method for a multilayer semiconductor wafer is described. The semiconductor wafer includes a supporting substrate, at least one intermediate layer and a surface layer in which an intermediate layer has an exposed lateral edge and the wafer is to be subjected to a subsequent treatment. The method includes encapsulating the exposed lateral edge of the intermediate layer with a portion of the surface layer to prevent attack on the peripheral edge during the subsequent treatment.
REFERENCES:
patent: 4795718 (1989-01-01), Beitman
patent: 4952526 (1990-08-01), Pribat et al.
patent: 5086011 (1992-02-01), Shiota
patent: 5091330 (1992-02-01), Cambou et al.
patent: 5233218 (1993-08-01), Miura
patent: 5426073 (1995-06-01), Imaoka et al.
patent: 5723385 (1998-03-01), Shen et al.
patent: 6150696 (2000-11-01), Iwamatsu et al.
patent: 6232201 (2001-05-01), Yoshida et al.
patent: 1 158 581 (2001-11-01), None
patent: 7-161948 (1995-06-01), None
patent: 2000-299451 (2000-10-01), None
patent: WO 01/15218 (2001-03-01), None
patent: WO 03/005434 (2003-01-01), None
Jean-Pierre Colinge,Silicon on Insulator Technology: Materials to VLSI, 2ndEdition, Kluwer Academic Publishers, pp. 50-51 (1997).
Maleville Christophe
Neyret Eric
Malsawma Lex
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
LandOfFree
Preventive treatment method for a multilayer semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Preventive treatment method for a multilayer semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preventive treatment method for a multilayer semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3805386