Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-07-24
2007-07-24
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
11626285
ABSTRACT:
An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
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Inokuchi Tomoaki
Saito Yoshiaki
Sugiyama Hideyuki
Kabushiki Kaisha Toshiba
Nguyen Tuan T.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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