Plasma treatment method for electromigration reduction

Details Plasma treatment method for electromigration reduction Plasma treatment method for electromigration reduction

Filed on

2007-04-24

Date issued

2007-04-24

Examiner

Hoang, Quoc (Department: 2818)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

C438S637000, C257S621000, C257SE21575

Type

Reexamination Certificate

Status

active

Patent number

10882069

Description

ABSTRACT:
A plasma treatment method which is capable of extending the MTF (mean-time-to-failure) of metal interconnects fabricated on a semiconductor wafer substrate, is disclosed. The invention includes providing a trench typically in a dielectric layer on a substrate; depositing a metal in the trench; and exposing the metal to a nitrogen-based plasma. The plasma-treatment step accelerates grain growth and re-orients the grains in the metal to a closely-packed crystal orientation texture which approaches or approximates the <111> crystal orientation texture of copper.

REFERENCES:
patent: 6506677 (2003-01-01), Avanzino et al.
patent: 6713386 (2004-03-01), Hu et al.
patent: 2002/0177329 (2002-11-01), Yang et al.

Affiliated with

Also associated with

Rating

Plasma treatment method for electromigration reduction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma treatment method for electromigration reduction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma treatment method for electromigration reduction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3803655