Micromechanical cap structure and a corresponding production...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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C257SE27114

Reexamination Certificate

active

10483011

ABSTRACT:
A micromechanical cap structure and a corresponding manufacturing method are described. The micromechanical cap structure includes a first wafer with a micromechanical functional structure, and a second wafer to form a cap over the micromechanical functional structure. The first and second wafers have in their interior a support structure with a metal-semiconductor contact, and in their edge zone a bonding structure. The edge zone of the second wafer, when in the capped state, is arched in relation to the interior of the second wafer.

REFERENCES:
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patent: WO 85 05737 (1985-12-01), None
Drost et al., Anodic Bonding with Sputtered Pyrex Glass Layers, Proceedings of the Micro Materials Conference, Berlin, 1997, p. 933-937.
Drost et al., Anodic Bonding with Sputtered Pyrex Glass Layers, Proceedings of the Micro Materials Conference, Berlin, 1997, p. 933.

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