Methods for fabricating one or more metal damascene...

Details Methods for fabricating one or more metal damascene... Methods for fabricating one or more metal damascene...

2007-07-03

2007-07-03

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C257S751000

Reexamination Certificate

active

11270270

ABSTRACT:
Methods for fabricating one or more metal (e.g., copper) damascene structures in a semiconductor wafer use at least three polishing steps to reduce erosion topography in the resulting metal damascene structures and/or increase throughput. The polishing steps may be performed at four polishing units of a polishing apparatus, which may include one or more pivotable load/unload cups to transfer the semiconductor wafer between some of the polishing units.

REFERENCES:
patent: 6656842 (2003-12-01), Li et al.

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