Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-15
2007-05-15
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S294000, C438S295000, C438S296000, C438S405000, C438S411000, C438S424000, C257SE21435
Reexamination Certificate
active
10906014
ABSTRACT:
A method of forming a semiconductor device, including providing a substrate having a first insulative layer on a surface of the substrate, and a device layer on a surface of the first insulative layer, forming a spacer around the first insulative layer and the device layer, removing a portion of the substrate adjacent to the first insulative layer in a first region and a non-adjacent second region of the substrate, such that an opening is formed in the first and second regions of the substrate, leaving the substrate adjacent to the first insulative layer in a third region of the substrate, filling the opening within the first and second regions of the substrate, planarizing a surface of the device, and forming a device within the device layer, such that diffusion regions of the device are formed within the device layer above the first and second regions of the substrate, and a channel region of the device is formed above the third region of the substrate.
REFERENCES:
patent: 5665613 (1997-09-01), Nakashima et al.
patent: 5780900 (1998-07-01), Suzuki et al.
patent: 6180487 (2001-01-01), Lin
patent: 6342421 (2002-01-01), Mitani et al.
patent: 6531741 (2003-03-01), Hargrove et al.
patent: 6599789 (2003-07-01), Abbott et al.
patent: 7109549 (2006-09-01), Ozawa
Furukawa Toshiharu
Radens Carl J.
Tonti William R.
Williams Richard Q.
Canale Anthony J.
International Business Machines - Corporation
Pham Thanh V.
Schmeiser Olsen & Watts
Smith Matthew
LandOfFree
Structure and method for thin box SOI device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure and method for thin box SOI device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for thin box SOI device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3801272