Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S307000, C257S308000
Reexamination Certificate
active
10721082
ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor structure formed above the semiconductor substrate and comprising a first electrode, a second electrode provided below the first electrode, a third electrode provided below the second electrode, a first dielectric film provided between the first electrode and the second electrode, and a second dielectric film provided between the second electrode and the third electrode, an insulating film covering the capacitor structure and having a first hole reaching the first electrode, a second hole reaching the second electrode, and a third hole reaching the third electrode, a first conductive connection electrically connecting the first electrode and the third electrode and having portions buried in the first and third holes, and a second conductive connection formed-separately from the first conductive connection and having a portion buried in the second hole.
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Japanese Patent Office Notification for Reasons of Rejection and English translation thereof.
Houng, M. P. et al., “High Capacitance Density in a Ta2O5Folded Capacitor Chip”, Jpn. J. Appl. Phys. vol. 41, Part 1, No. 3A, pp. 1311-1314, (Mar. 2002).
Kabushiki Kaisha Toshiba
Lee Eugene
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