Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-15
2007-05-15
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S513000, C438S792000, C257SE21170, C257SE21319
Reexamination Certificate
active
11068933
ABSTRACT:
A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main component to thereby form an insulating layer, and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots to thereby modify the insulating film by using the thus generated plasma.
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Matsuyama Seiji
Murakawa Shigemi
Nakanishi Toshio
Ozaki Shigenori
Sugawara Takuya
Nhu David
Tokyo Electron Limited
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