Method of fabricating a semiconductor integrated circuit...

Details Method of fabricating a semiconductor integrated circuit... Method of fabricating a semiconductor integrated circuit...

2007-04-17

2007-04-17

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S946000, C430S005000, C430S313000

Reexamination Certificate

active

11022758

ABSTRACT:
Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.

REFERENCES:
patent: 5708612 (1998-01-01), Abe
patent: 5804340 (1998-09-01), Garza et al.
patent: 5899719 (1999-05-01), Hong
patent: 6060769 (2000-05-01), Wark
patent: 6846598 (2005-01-01), Hasegawa et al.
patent: 05-289307 (1992-04-01), None
patent: 2000-91192 (2000-03-01), None
International Search Reported dated Oct. 15, 2001 for PCT/JP01/07035.
International Preliminary Examination Report.
Chinese Office Action dated Nov. 18, 2005.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor integrated circuit... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3799535