Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Pizarro-Crespo, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27112
Reexamination Certificate
active
10237206
ABSTRACT:
A method of manufacturing a semiconductor device substrate is disclosed, which comprises forming a mask layer patterned on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the pattern of the mask layer to form a trench leading to the insulating layer, etching a protective layer deposited thinner on the semiconductor substrate than the thickness of the insulating layer to form a sidewall protective film which covers a side surface of the trench, etching the insulating layer from a bottom surface of the trench to the semiconductor substrate; and growing a single-crystalline layer from the surface of the semiconductor substrate exposed as a result of etching the insulating layer.
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Mizushima Ichiro
Nagano Hajime
Oyamatsu Hisato
Sato Tsutomu
Yamada Takashi
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