Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-20
2007-03-20
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S643000, C438S653000, C438S679000, C438S680000, C438S681000, C257SE21170, C257SE21584
Reexamination Certificate
active
10326712
ABSTRACT:
An alternating source MOCVD process is provided for depositing tungsten nitride thin films for use as barrier layers for copper interconnects. Alternating the tungsten precursor produces fine crystal grain films, or possibly amorphous films. The nitrogen source may also be alternated to form WN/W alternating layer films, as tungsten is deposited during periods where the nitrogen source is removed.
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Article entitled, “Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metalization.” by Jean K. Kelsey et al., published in J. Vac. Sci. Technol. B 17(3) May/Jun. 1999, pp. 1101-1104.
Article entitled, “WNxdiffusion barriers between Si and Cu” by Masaki Uekubo et al., published in Thin Solid Films 286 (1996), pp. 170-175.
Article entitled, “Properties of reactively sputtered WNxas Cu diffusion barrier.” by Bong-Seok Suh et al., published in Thin Solid Films 348 (1999), pp. 299-303.
Evans David R.
Hsu Sheng Teng
Pan Wei
Lee Kyoung
Lindsay, Jr. Walter
Sharp Laboratories of America Inc.
Varitz PC Robert D.
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