Imaging device and manufacturing method thereof

Details Imaging device and manufacturing method thereof Imaging device and manufacturing method thereof

2007-07-10

2007-07-10

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S233000, C438S048000

Reexamination Certificate

active

10866829

ABSTRACT:
Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate, and a transfer gate having one of a concave and convex portions toward the floating diffusion region, the transfer gate being formed above the silicon substrate between the photodiode and the floating diffusion region by interposing a gate insulating film therebetween.

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