Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-27
2007-03-27
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S627000, C438S637000, C438S717000
Reexamination Certificate
active
10774496
ABSTRACT:
A four-layer structured hard mask composed of a SiC film, a first SiO2film, a SiC film, and a second SiO2film is formed on a porous silica film as an interlayer insulating film. Then, the second SiO2film is etched with a resist mask. Subsequently, the SiC film is etched with the second SiO2film. Thereafter, the first SiO2film is etched with the SiC film. Subsequently, the SiC film is etched with the SiC film. Then, by etching the porous silica film with the SiC film, a wiring trench is formed. At this time, a selection ratio between the SiC film and the porous silica film is large, so that deformation of the SiC film rarely occurs, which prevents leakage caused by the deformation.
REFERENCES:
patent: 2003/0119305 (2003-06-01), Huang et al.
patent: 2000-351976 (2000-12-01), None
patent: 2001-077196 (2001-03-01), None
patent: 2002-222860 (2002-08-01), None
Chen Jack
Westerman, Hattori, Daniels & Adrian , LLP.
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