Method of fabricating SRAM device

Details Method of fabricating SRAM device Method of fabricating SRAM device

2007-01-02

2007-01-02

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S184000, C438S230000, C438S595000

Reexamination Certificate

active

11027826

ABSTRACT:
A method of fabricating an SRAM device is provided, by which a junction node area is stably secured in a 1T type SRAM device. The method includes forming first and second conductor patterns on a cell area of a semiconductor substrate and a third conductor pattern on a periphery area of the semiconductor substrate, stacking first to third insulating layers over the substrate, forming a spacer on a sidewall of the third conductor pattern in the exposed periphery area, removing the third insulating layer, and forming first and second spacers on sidewalls of the first and second conductor patterns.

REFERENCES:
patent: 6743717 (2004-06-01), Wu et al.
patent: 2002/0113295 (2002-08-01), Nakamura
patent: 2004/0185671 (2004-09-01), Lee

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