Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S018000, C257S019000, C257SE21170, C257SE21320, C257SE21182, C257SE21545, C257SE21561
Reexamination Certificate
active
11179282
ABSTRACT:
An integrated circuit (IC) utilizes a strained layer. The substrate can utilize trenches in a base layer to induce stress in a layer. The trenches define pillars on a back side of a bulk substrate or base layer of a semiconductor-on-insulator (SOI) wafer.
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International Search Report for Application No. PCT/US2004/035417, mailed Apr. 12, 2005, 4 pages.
Chan Simon S.
Pelella Mario M.
Advanced Micro Devices , Inc.
Foley & Lardner LLP
Nhu David
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