Semiconductor device, and method of fabricating the same

Details Semiconductor device, and method of fabricating the same Semiconductor device, and method of fabricating the same

2007-01-23

2007-01-23

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S639000, C257SE21267

Reexamination Certificate

active

11181788

ABSTRACT:
A silicon oxynitride film is manufactured using SiH4, N2O and H2by plasma CVD, and it is applied to the gate insulating film (1004in FIG.1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased, to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.

REFERENCES:
patent: 3765935 (1973-10-01), Rand et al.
patent: 5274602 (1993-12-01), Glenn
patent: 5323042 (1994-06-01), Matsumoto
patent: 5407870 (1995-04-01), Okada et al.
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5640067 (1997-06-01), Yamauchi et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5897328 (1999-04-01), Yamauchi et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5969397 (1999-10-01), Grider et al.
patent: 5970384 (1999-10-01), Yamazaki et al.
patent: 5972437 (1999-10-01), Ohori et al.
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6174816 (2001-01-01), Yin et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6291363 (2001-09-01), Yin et al.
patent: 6306694 (2001-10-01), Yamazaki et al.
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6348420 (2002-02-01), Raaijmakers et al.
patent: 6399988 (2002-06-01), Yamazaki
patent: 6429483 (2002-08-01), Teramoto
patent: 6461899 (2002-10-01), Kitakado et al.
patent: 6524895 (2003-02-01), Yamazaki et al.
patent: 6531713 (2003-03-01), Yamazaki
patent: 6534826 (2003-03-01), Yamazaki
patent: 6573195 (2003-06-01), Yamazaki et al.
patent: 2001/0011725 (2001-08-01), Sakama et al.
patent: 2004/0238820 (2004-12-01), Sakama
patent: 04-369271 (1992-12-01), None
patent: 05-102483 (1993-04-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-335900 (1995-12-01), None
patent: 08-055846 (1996-02-01), None
patent: 08-055847 (1996-02-01), None
patent: 08-055848 (1996-02-01), None
patent: 08-078329 (1996-03-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-247735 (1998-09-01), None
Jiun-Lin Yeh et al., “Structural and optical properties of amorphous silicon oxynitride,” J. Appl. Phys. vol. 79, No. 2, Jan. 15, 1996, pp. 656-663.
V. J. Kapoor, “Review of Thin Oxynitride Dielectrics For Memory Device Technology,”°May 5-10, 1991, Electrochem. Soc.
Rabiller, P., et al., “Electrical Properties of PECVD SiOxNy:HPrepared by Microwave Plasma,” Conference Record of the 1988 IEEE International Symposium on Electrical Insulation, Boston, MA, Jun. 5-8, 1988, pp. 149-152.
V. J. Kapoor,Review of Thin Oxynitride Dielectrics For Memory Device Technology, J. Electrochem. Soc., vol. 138, No. 3, May 5-10, 1991, pp. 657-666.

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