Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-07-03

2007-07-03

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S353000, C257S501000

Reexamination Certificate

active

10789352

ABSTRACT:
A semiconductor device comprising a high breakdown voltage transistor and a low breakdown voltage transistor. The semiconductor device comprises a support substrate, an insulating layer formed on the support substrate, a high breakdown voltage transistor, a low breakdown voltage transistor, wherein the high breakdown voltage transistor is adjacent to a first isolation region having a depth that reaches the insulating layer, and the low breakdown voltage transistor is adjacent to a second isolation region having a depth that does not reach the insulating layer.

REFERENCES:
patent: 5841174 (1998-11-01), Arai
patent: 5965921 (1999-10-01), Kojima
patent: 6404026 (2002-06-01), Tsuyuki
patent: 6933565 (2005-08-01), Matsumoto et al.
patent: 2004/0079993 (2004-04-01), Ning et al.
patent: 10-321716 (1998-12-01), None
patent: 2001-007219 (2001-01-01), None
patent: 2001-250921 (2001-09-01), None
patent: 2001-351995 (2001-12-01), None
Japanese Office Action dated May 9, 2005.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3794653