Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-13
2007-03-13
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21693, C257SE27103, C438S259000, C438S267000, C438S270000
Reexamination Certificate
active
11013593
ABSTRACT:
A widened contact area (170X) of a conductive feature (170) is formed by means of self-alignment between an edge (170E2) of the conductive feature and an edge (140E) of another feature (140). The other feature (“first feature”) is formed from a first layer, and the conductive feature is formed from a second layer overlying the first layer. The edge (170E2) of the conductive feature is shaped to provide a widened contact area. This shaping is achieved in a self-aligned manner by shaping the corresponding edge (140E) of the first feature.
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MacPherson Kwok & Chen & Heid LLP
Pham Long
ProMOS Technologies Inc.
Rao Shrinivas H.
Shenker Michael
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