Semiconductor integrated device

Details Semiconductor integrated device Semiconductor integrated device

2007-07-17

2007-07-17

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S197000, C257S288000, C257SE21051, C257SE21320, C257SE21545

Reexamination Certificate

active

11092920

ABSTRACT:
A semiconductor integrated apparatus, including: an SOI (Silicon On Insulator) substrate which has a support substrate and an embedded insulation film; an NMOSFET, a PMOSFET and an FBC (Floating Body Cell) formed on the SOI substrate separately from each other; a p type of first well diffusion region formed along the embedded insulation film in the support substrate below the NMOSFET; an n type of second well diffusion region formed along the embedded insulation film in the support substrate below the PMOSFET; and a conduction type of third well diffusion region formed along the embedded insulation film in the support substrate below the FBC.

REFERENCES:
patent: 5789790 (1998-08-01), Morishita et al.
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6465316 (2002-10-01), Hattori et al.
patent: 6538916 (2003-03-01), Ohsawa
patent: 6593627 (2003-07-01), Egashira
patent: 6903419 (2005-06-01), Ohsawa
patent: 7023054 (2006-04-01), Ohsawa

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