Method for fabricating a low resistance TMR read head

Details Method for fabricating a low resistance TMR read head Method for fabricating a low resistance TMR read head

2007-09-04

2007-09-04

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S381000

Reexamination Certificate

active

10768917

ABSTRACT:
A method is provided for forming a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier layer is formed by natural oxidation of an ultra-thin (two atomic layers) Al or Hf—Al layer deposited on an electrode whose surface has first been treated to form an oxygen surfactant layer, the oxygen within the surfactant layer being adsorbed within the ultra-thin layer to produce a uniform and stable Al2O3stoichiometry (or HfO stoichiometry) in the tunneling barrier layer.

REFERENCES:
patent: 5316982 (1994-05-01), Taniguchi
patent: 5901018 (1999-05-01), Fontana, Jr. et al.
patent: 6072382 (2000-06-01), Daughton et al.
patent: 6226160 (2001-05-01), Gallagher et al.
patent: 6341053 (2002-01-01), Nakada et al.
patent: 6411478 (2002-06-01), Mao et al.
patent: 6420230 (2002-07-01), Derderian et al.
patent: 6462541 (2002-10-01), Wang et al.
patent: 6661625 (2003-12-01), Sin et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6815784 (2004-11-01), Park et al.
patent: 6819532 (2004-11-01), Kamijo
patent: 6930013 (2005-08-01), Choi et al.
patent: 6974708 (2005-12-01), Horng et al.
patent: 2005/0170532 (2005-08-01), Horng et al.
patent: 02002164506 (2002-06-01), None
“Oxygen as a Surfactant in the Growth of Giant Magnetoresistance Spin Valves,” by Egelhoff et al., J. of Appl. Phys. 82(12), Dec. 15, 1997, pp. 6142-6151.
“Continuous Thin Barriers for Low-Resistance Spin-Dependent Tunnel Junctions,” by Wang et al., J. of Appl. Phys. , vol. 93, No. 10, May 15, 2003, pp. 8367-8369.
“First Principles Study of Atomic-Scale Al2O3Films as Insulators for Magnetic Tunnel Junctions,” by Noriko Watori , et al., Japan Journal of Applied Physics, vol. 39, (2000), pp. L479-L481.
Magneto resistance of Co100-xFe x/Al-Oxide/Co100-xFeX Tunnel Junctions; by Eiji Nakashio et al., IEEE Trans. on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2812-2814.
“Low Resistance Magnetic Tunnel Junctions and Their Interface Structures,” by J. Fujikata et al., Journal of Applied Physics , vol. 89, No. 11, Jun. 1, 2001, pp. 7558-7560.
“Progress and Outlook for MRAM Technology,” by.S. Tehrani et al., IEEE Trans. on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 2814-2819.
Co-pending HMG-05-043 U.S. Appl. No. 11/317,388, filed Dec. 22, 2005, “MgO/NiFe MTJ for High Performance MRAM Application,” assigned to the same assignee as the present invention.

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