Semiconductor device

Details Semiconductor device Semiconductor device

2007-05-22

2007-05-22

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S303000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000, C438S003000

Reexamination Certificate

active

10916645

ABSTRACT:
A semiconductor device includes: an insulating underlying layer of which surface portion has a concave portion; a lower electrode formed on the underlying layer along the inner face of the concave portion; a capacitor insulating film formed on the lower electrode and made of a high-dielectric or a ferroelectric subjected to thermal treatment for crystallization; and an upper electrode formed on the capacitor insulating film. The lower electrode and the upper electrode are made of a material that generates tensile stress in the thermal treatment for the capacitor insulating film, and the upper end part of the side wall and the corner part at the bottom face of the concave portion of the underlying layer are rounded.

REFERENCES:
patent: 5677226 (1997-10-01), Ishitani
patent: 5728596 (1998-03-01), Prall
patent: 6437387 (2002-08-01), Gutsche
patent: 2002-198498 (2002-07-01), None

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