Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2007-01-23

2007-01-23

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S365000, C257S369000, C257S391000, C257S392000, C257SE21435, C257SE29278

Reexamination Certificate

active

10252101

ABSTRACT:
A MISFET capable of a high speed operation includes a metal silicide layer in a high concentration region aligned with a gate side wall layer on a self-alignment basis. A MISFET which can be driven at a high voltage includes an LDD portion having a width greater than the width of the side wall layer, a high concentration region in contact with the LDD portion and a metal silicide layer in the high concentration region.

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