Semiconductor devices and methods of forming a barrier metal...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S656000, C438S675000, C257SE21584

Reexamination Certificate

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10925777

ABSTRACT:
Semiconductor devices and methods of forming a barrier metal in semiconductor devices are disclosed. A disclosed semiconductor device includes a metal layer on a semiconductor substrate; an interlayer dielectric layer on the metal layer, a hole in the interlayer dielectric layer that exposes a portion of the metal layer; and a barrier metal on inner walls of the hole. The barrier metal is made of TaSiN having a resistivity less than or equal to about 10,000 μohm-cm.

REFERENCES:
patent: 6376371 (2002-04-01), Jain et al.
patent: 6436825 (2002-08-01), Shue
patent: 2002/0005582 (2002-01-01), Nogami et al.
patent: 2004/0009336 (2004-01-01), Marcadal et al.

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