Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-10
2007-07-10
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S653000, C438S688000
Reexamination Certificate
active
10390413
ABSTRACT:
There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.
REFERENCES:
patent: 5350484 (1994-09-01), Gardner et al.
patent: 5420070 (1995-05-01), Matsuura et al.
patent: 5561326 (1996-10-01), Ito et al.
patent: 5736002 (1998-04-01), Allen et al.
patent: 5904556 (1999-05-01), Suzuki et al.
patent: 6090710 (2000-07-01), Andricacos et al.
patent: 6187662 (2001-02-01), Usami et al.
patent: 6346747 (2002-02-01), Grill et al.
patent: 6407453 (2002-06-01), Watanabe et al.
patent: 6503803 (2003-01-01), Todorobaru et al.
patent: 6555465 (2003-04-01), Yamaha
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 6762501 (2004-07-01), Park et al.
patent: 6803300 (2004-10-01), Higashi et al.
patent: 2004/0089947 (2004-05-01), Iwasaki et al.
patent: 07-193066 (1995-07-01), None
patent: 8-186175 (1996-07-01), None
Iwasaki Tomio
Miura Hideo
Moriya Hiroshi
Nishihara Shinji
Sahara Masashi
Antonelli, Terry Stout & Kraus, LLP.
Kebede Brook
Nguyen Khiem
Renesas Technology Corp.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3791103