Integrated circuit devices having active regions with...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S332000

Reexamination Certificate

active

10867513

ABSTRACT:
An integrated circuit device includes a substrate that has a trench formed therein. An isolation layer is disposed in the trench and covers a first sidewall portion of the trench. A gate electrode is disposed on a second sidewall portion of the trench.

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Office Action as issued by the German Patent and Trademark Office for German patent application No. 10/152911.2-33 mailed on Apr. 7, 2005.

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