Method to change the profiles of released membranes

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Reexamination Certificate

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10952757

ABSTRACT:
A method to change the profile of released membranes is disclosed. This method is to form an island structure at certain regions of membranes. Membranes comprise one or several layers of different materials, and at least one layer has intrinsic or residual stress. The profile of membrane will change from being flat to curved at the region of island structure when membranes are released from sacrificial layers.

REFERENCES:
patent: 7053737 (2006-05-01), Schwartz et al.
patent: 7057251 (2006-06-01), Reid
patent: 2003/0031221 (2003-02-01), Wang et al.
patent: 2004/0066258 (2004-04-01), Cohn et al.
patent: 2004/0252936 (2004-12-01), Despont et al.
patent: 2005/0130360 (2005-06-01), Zhan et al.
patent: 2005/0226281 (2005-10-01), Faraone et al.

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