Thin film transistor, manufacturing method thereof, and...

Details Thin film transistor, manufacturing method thereof, and... Thin film transistor, manufacturing method thereof, and...

2007-03-27

2007-03-27

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S163000, C438S164000, C257SE51005

Reexamination Certificate

active

10677257

ABSTRACT:
A thin film transistor has a structure capable of decreasing deterioration in Vgs-Ids characteristics. The thin film transistor has a source region composed of an N-type impurity-diffused region, a drain region, and a gate electrode, and a channel region formed directly below the gate electrode. To the source region and the drain region are connected a source electrode and a drain electrode, respectively, through a plurality of contact holes. In the channel region are formed a plurality of P-type impurity-diffused regions at constant intervals.

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