Methods for fabricating an STI film of a semiconductor device

Details Methods for fabricating an STI film of a semiconductor device Methods for fabricating an STI film of a semiconductor device

2007-05-15

2007-05-15

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21438

Reexamination Certificate

active

11027519

ABSTRACT:
Methods for fabricating a shallow trench isolation (STI) of a semiconductor device are disclosed. A disclosed method includes: forming a trench on a semiconductor substrate, forming an oxide layer on the semiconductor substrate and the trench, forming a photoresist pattern on the oxide layer exposing the oxide layer on a bottom surface of the trench, forming STI films on sidewalls of the trench by etching the exposed oxide layer using the photoresist pattern as an etch protection layer, removing the photoresist pattern, developing an epitaxial layer between the STI, and planarizing the epitaxial layer and the oxide layer.

REFERENCES:
patent: 6436791 (2002-08-01), Lin et al.
patent: 6444518 (2002-09-01), Jang et al.
patent: 6723618 (2004-04-01), Meyer et al.

Affiliated with

Also associated with

Rating

Methods for fabricating an STI film of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for fabricating an STI film of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for fabricating an STI film of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3785776