Semiconductor device, manufacturing method thereof, and...

Details Semiconductor device, manufacturing method thereof, and... Semiconductor device, manufacturing method thereof, and...

2007-05-08

2007-05-08

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S066000

Reexamination Certificate

active

11134401

ABSTRACT:
A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resistance of the entire semiconductor layer of a TFT which is in an on state is reduced to increase an on current. In addition, a carrier life time due to photoexcitation produced in the high concentration impurity region can be shortened to reduce light sensitivity.

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Hara et al., “Ultra-high Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization”, Digest of Technical Papers, AM-LCD, Jul. 11-13, 2001, pp. 227-230.

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