Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-07-03

2007-07-03

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C438S151000

Reexamination Certificate

active

11000045

ABSTRACT:
A silicide film is provided in diffusion regions formed in a semiconductor layer. The silicide film has a thickness substantially same as that of the semiconductor layer. The silicide film has the bottom located in the vicinity of an interface between the insulator film and the semiconductor layer.

REFERENCES:
patent: 6429079 (2002-08-01), Maeda et al.
patent: 6576956 (2003-06-01), Kawanaka
patent: 6621725 (2003-09-01), Ohsawa
patent: 6844223 (2005-01-01), Ko et al.
patent: 2005/0285209 (2005-12-01), Inoh et al.
patent: 2003-68877 (2003-03-01), None
U.S. Appl. No. 11/304,681, filed Dec. 16, 2005, Hamamoto.
Takashi Ohsawa, et al. “Memory Design Using One-Transistor Gain Cell on SOI”, ISSCC Digest of Technical Papers, Feb. 2002, pp. 152-154.

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