Method for chemical vapor deposition in high aspect ratio...

Details Method for chemical vapor deposition in high aspect ratio... Method for chemical vapor deposition in high aspect ratio...

2007-09-25

2007-09-25

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S620000, C427S096800, C427S097200, C427S097700, C427S124000, C427S294000, C257SE21585

Reexamination Certificate

active

11169244

ABSTRACT:
A method of depositing conformal film into high aspect ratio spaces includes the step of forming a gradient of precursor gas inside the space(s) prior to deposition. The gradient may be formed, for example, by reducing the pressure within the deposition chamber or by partial evacuation of the deposition chamber. The temperature of the substrate is then briefly increased to preferentially deposit precursor material within the closed or “deep” portion of the high aspect ratio space. The process may be repeated for a number of cycles to completely fill the space(s). The process permits the filling of high aspect ratio spaces without any voids or keyholes that may adversely impact the performance of the resulting device.

REFERENCES:
patent: 6551399 (2003-04-01), Sneh et al.
patent: 7135421 (2006-11-01), Ahn et al.
patent: 2005/0011457 (2005-01-01), Chiang et al.
patent: 2005/0095872 (2005-05-01), Belyansky et al.

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